Methods for monitoring a chemical mechanical planarization process of a metal layer using an in-situ eddy current measuring system
US7264537B1 · kind B1 · utility
8Cited by
7References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 4, 2006 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Oct 2, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/105
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Methods are provided for monitoring a CMP process. An exemplary method comprises generating a plurality of thickness measurements of a metal layer using an in-situ eddy current measuring system. The thickness measurements are analyzed to derive a plurality of work piece metrics and the work piece metrics are assessed to determine if a predetermined number is within a predetermined specification. A signal is generated if the predetermined number of the work piece metrics is outside the predetermined specification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.