Process and apparatus for treating a workpiece using ozone
US7264680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2004 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Jun 3, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40° C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.