OPC based illumination optimization with mask error constraints
US7264906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2004 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Jul 5, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and system of optimizing the illumination of a mask in a photolithography process. A specific, preferred method includes the steps of: loading minimum design rules of a layout, loading exposure latitude constraints, loading mask error constraints, loading initial illumination conditions, simulating current illumination conditions, obtaining dose-to-print threshold from the minimum design rules (i.e., lines-and-space feature), applying OPC on the layout using the dose-to-print threshold, calculating DOF using the exposure latitude and mask error constraints, changing the illumination conditions in order to attempt to maximize common DOF with the exposure latitude and mask error constraints, and continuing the process until maximum common DOF is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.