Antireflective compositions for photoresists

US7264913B2 · kind B2 · utility

Assignee

• AZ Electronic Materials USA Corp. · US

Inventors

• Hengpeng Wu
• Shuji Ding-Lee · Readington, US
• Zhong Xiang · Somerville, US
• Joseph E. Oberlander · Phillipsburg, US
• Mark Neisser · Whitehouse Station, US
• Eleazar Gonzalez · Bloomfield, US
• Jainhui Shan · Pennington, US

Key dates

• Filing date: Nov 21, 2002
• Grant date: Sep 4, 2007
• Expiry date: Dec 26, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S430/122
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The present invention relates to a novel antireflective coating composition comprising a polymer, a crosslinking agent and an acid generator. The present invention further relates to a process for using the novel composition, particularly at 193 nm. The polymer of the present invention contains at least one unit selected from structures 1, 2 and 3,where, Y is a hydrocarbyl linking group of 1 to about 10 carbon atoms, R, R1, R′ and R″ are independently hydrogen, hydrocarbyl group of 1 to about 10 carbon atoms, halogen, —O(CO)Z, —C(CF3)2Z, —C(CF3)2(CO)OZ, —SO2CF3, —(CO)OZ, —SO3Z, —COZ, —OZ, —NZ2, —SZ, —SO2Z, —NHCOZ, —NZCOZ or —SO2NZ2, where Z is H or a hydrocarbyl group of 1 to about 10 carbon atoms, n=1–4, X is O, CO, S, COO, CH2O, CH2COO, SO2, NH, NL, OWO, OW, W, and where L and W are independently hydrocarbyl groups of 1 to about 10 carbon atoms, and m=0–3.