Semiconductor device
US7265388B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2004 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Nov 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.