Method of operating non-volatile memory device
US7266014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2005 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Sep 16, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating a non-volatile memory is provided, wherein the non-volatile memory at least includes: a gate structure formed by stacking a tunneling dielectric layer, charge trapping layer, a dielectric layer and a gate conducting layer sequentially, and a source region and a drain region. When the operating method is carried out, a ultraviolet is irradiated to the non-volatile memory to inject electrons into the charge trapping layer to erase the non-volatile memory, and a negative voltage is applied to the gate conductive layer and a positive voltage is applied to the drain region to program the non-volatile memory by band-to-band induced hot hole injection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.