Method for measuring offset voltage of sense amplifier and semiconductor employing the method
US7266030B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2005 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Mar 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/105
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device precisely measures the offset voltage of a bit line sense amplifier. The semiconductor memory device of the invention includes: a bit line sense amplifier for amplifying a voltage difference between a bit line and an inversion bit line, which carry data written on a memory cell when the data is read; a data input/output line and an inversion data input/output line within a core region coupled to the bit line and the inversion bit line via one or more switches; a first external voltage supply pad connected to the data input/output line; a second external voltage supply pad connected to the inversion data input/output line; and an external voltage supply controller for switching a connection of the data input/output line and the first external voltage supply pad and a connection of the inversion data input/output line and the second external voltage supply pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.