Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon
US7267741B2 · kind B2 · utility
10Cited by
13References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 14, 2003 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Jun 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Silicon carbide components of a plasma processing apparatus, methods of making the components, and methods of using the components during processing of semiconductor substrates to provide for reduced particle contamination of the substrates are provided. The silicon carbide components are made by a process that results in free-carbon in the components. The silicon carbide components are treated to remove the free-carbon from at least the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.