Patent · US Expired

Method and system for controlling the chemical mechanical polishing of substrates by calculating an overpolishing time and/or a polishing time of a final polishing step

US7268000B2 · kind B2 · utility

0Cited by

4References

29Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Dirk Wollstein · Dresden, DE
Jan Raebiger · Dresden, DE
Gerd Marxsen · Radebeul, DE

Key dates

Filing date	Sep 30, 2002
Grant date	Sep 11, 2007
Priority date	—
Expiry date	Dec 19, 2025

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB24B49/03
WIPO fieldMachine tools
WIPO sectorMechanical engineering

Abstract

A method and a controller for the chemical mechanical polishing (CMP) of substrates and, in particular, for the chemical mechanical polishing of metallization layers is disclosed. In a linear model of the CMP process, the erosion of the metallization layer to be treated is determined by the overpolish time and possibly by an extra polish time on a separate polishing platen for polishing the dielectric layer, wherein the CMP inherent characteristics are represented by sensitivity parameters derived empirically. Moreover, the control operation is designed so that even with a certain inaccuracy of the sensitivity parameters due to subtle process variations, a reasonable controller response is obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.