Method of forming a pseudo SOI substrate and semiconductor devices
US7268023B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2005 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Mar 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a depth, forming a layer of insulating material within each of the plurality of trenches, the layer of insulating material having a thickness that is less than the depth of the trenches, and performing an anneal process on the substrate in a hydrogen environment to cause the silicon substrate material to merge above the layer of insulating material within the plurality of trenches to thereby define a pseudo SOI substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.