Patent · US Expired

Method for fabricating microchips using metal oxide masks

US7268037B2 · kind B2 · utility

0Cited by

6References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stefan Jakschik · Kessel-Lo, BE
Thomas Hecht · Dresden, DE
Uwe Schroder · Dresden, DE
Matthias Goldbach · Dresden, DE

Key dates

Filing date	Jan 24, 2005
Grant date	Sep 11, 2007
Priority date	—
Expiry date	Jan 24, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/047
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for modifying sections of a semiconductor includes covering the sections to remain free of doping with a metal oxide, e.g., aluminum oxide. Then, the semiconductor is doped, for example, from the gas phase, in those sections that are not covered by the aluminum oxide. Finally, the aluminum oxide is selectively removed again, for example using hot phosphoric acid. Sections of the semiconductor surface which are formed from silicon, silicon oxide or silicon nitride remain in place on the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.