Method for fabricating a substrate with useful layer on high resistivity support
US7268060B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2004 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Aug 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a substrate containing a useful semiconductor layer on a support having high resistivity by: preparing a base substrate of a semiconductor material containing a controlled quantity of interstitial oxygen, heat treating the base substrate to achieve at least partial precipitation of the interstitial oxygen therein, removing a superficial layer over a controlled depth from a surface of the base substrate that intended to receive a useful layer, forming the useful layer on the surface of the base substrate, with the base substrate serving as a support for the useful layer. This method is applicable in particular to SOI substrates having high resistivity for use in forming high frequency electronic circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.