Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
US7268076B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2005 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Apr 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76865
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.