Inventor · Livermore, CA, US

John Pipitone

28Patents
7h-index
23Co-inventors
65Inventor score

Filing activity: Feb 3, 2005 → Jul 18, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US7768269B2 Method of multi-location ARC sensing with adaptive threshold comparison Electricity 35 Active
US7737702B2 Apparatus for wafer level arc detection at an electrostatic chuck electrode Electricity 32 Active
US8070925B2 Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target Electricity 32 Active
US8491759B2 RF impedance matching network with secondary frequency and sub-harmonic variant Electricity 28 Active
US7244344B2 Physical vapor deposition plasma reactor with VHF source power applied through the workpiece Electricity 21 Expired
US7214619B2 Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece Electricity 16 Expired
US7780814B2 Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products Electricity 9 Active
US7750645B2 Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation Electricity 7 Active
US7804040B2 Physical vapor deposition plasma reactor with arcing suppression Electricity 6 Active
US7268076B2 Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Electricity 5 Expired
US8920611B2 Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning Electricity 4 Active
US8435379B2 Substrate cleaning chamber and cleaning and conditioning methods Electricity 4 Active
US9593411B2 Physical vapor deposition chamber with capacitive tuning at wafer support Electricity 4 Active
US7399943B2 Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Electricity 3 Expired
US7820020B2 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas Electricity 3 Active
US8062484B2 Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target Electricity 3 Active
US8512526B2 Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron Electricity 2 Active
US9856558B2 Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface Electricity 2 Active
US9017533B2 Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning Electricity 2 Active
US8846451B2 Methods for depositing metal in high aspect ratio features Electricity 2 Active
US7750644B2 System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating Electricity 2 Active
US8563428B2 Methods for depositing metal in high aspect ratio features Chemistry; Metallurgy 1 Active
US10648074B2 Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surface Electricity 1 Active
US7733095B2 Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode Electricity 1 Active
US8562798B2 Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.