Deep trench super switch device
US7268395B2 · kind B2 · utility
5Cited by
34References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 1, 2005 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Aug 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A deep trench super switch device has a plurality of trenches, each of the trenches containing a gate electrode polysilicon layer on top of a plurality of stacked conductive floating polysilicon layers, the remainder of each of the trenches being filled with a nonconductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.