Method of programming a memory device
US7269050B2 · kind B2 · utility
3Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2005 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Aug 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is a method of programming a memory device, wherein different levels or magnitudes of current may be applied to and imposed on the memory device so that any one of a plurality of memory states may be realized. A read step indicates the so determined state of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.