Programming memory devices
US7269066B2 · kind B2 · utility
56Cited by
2References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2005 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Jul 23, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.