Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer
US7270708B2 · kind B2 · utility
4Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2002 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Nov 24, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4583
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A susceptor (10) supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket (11) is formed on an upper surface of the susceptor to arrange the semiconductor substrate (W) inside thereof. The pocket (11) has a two-stage structure having an upper stage pocket (11a) for supporting an outer peripheral edge portion of the semiconductor substrate (W) and a lower stage pocket (11b) formed on a lower stage of a center side from the upper stage pocket (11a). A hole (12) penetrated to a rear surface of the susceptor and opened in the vapor phase growth is formed in the lower stage pocket (11b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.