Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7270848B2 · kind B2 · utility
23Cited by
11References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 23, 2004 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Nov 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.