Inventor · Albany, NY, US

Gerrit J. Leusink

50Patents
12h-index
77Co-inventors
87Inventor score

Filing activity: Sep 30, 1997 → Feb 19, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6161500A Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions Chemistry; Metallurgy 739 Expired
US6368987B1 Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions Chemistry; Metallurgy 571 Expired
US6274496A Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing Electricity 354 Expired
US6417626B1 Immersed inductively—coupled plasma source Electricity 27 Expired
US7772073B2 Semiconductor device containing a buried threshold voltage adjustment layer and method of forming Electricity 24 Active
US7270848B2 Method for increasing deposition rates of metal layers from metal-carbonyl precursors Electricity 23 Expired
US6302057A Apparatus and method for electrically isolating an electrode in a PECVD process chamber Electricity 18 Expired
US10833078B2 Semiconductor apparatus having stacked gates and method of manufacture thereof Electricity 16 Active
US6652711B2 Inductively-coupled plasma processing system Electricity 15 Expired
US7484315B2 Replaceable precursor tray for use in a multi-tray solid precursor delivery system Chemistry; Metallurgy 14 Expired
US7459396B2 Method for thin film deposition using multi-tray film precursor evaporation system Chemistry; Metallurgy 12 Active
US7488512B2 Method for preparing solid precursor tray for use in solid precursor evaporation system Chemistry; Metallurgy 12 Active
US7638002B2 Multi-tray film precursor evaporation system and thin film deposition system incorporating same Chemistry; Metallurgy 10 Expired
US7708835B2 Film precursor tray for use in a film precursor evaporation system and method of using Chemistry; Metallurgy 9 Active
US6626186B1 Method for stabilizing the internal surface of a PECVD process chamber Chemistry; Metallurgy 7 Expired
US10378105B2 Selective deposition with surface treatment Electricity 7 Active
US10068764B2 Selective metal oxide deposition using a self-assembled monolayer surface pretreatment Electricity 5 Active
US8197898B2 Method and system for depositing a layer from light-induced vaporization of a solid precursor Chemistry; Metallurgy 3 Active
US10014213B2 Selective bottom-up metal feature filling for interconnects Electricity 3 Active
US7985680B2 Method of forming aluminum-doped metal carbonitride gate electrodes Electricity 3 Active
US10453681B2 Method of selective vertical growth of a dielectric material on a dielectric substrate Electricity 2 Active
US9646898B2 Methods for treating a substrate by optical projection of a correction pattern based on a detected spatial heat signature of the substrate Electricity 2 Active
US7345184B2 Method and system for refurbishing a metal carbonyl precursor Chemistry; Metallurgy 2 Active
US8334183B2 Semiconductor device containing a buried threshold voltage adjustment layer and method of forming Electricity 2 Active
US8785310B2 Method of forming conformal metal silicide films Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.