Method of passivating of low dielectric materials in wafer processing
US7270941B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2003 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Aug 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02203
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS) and chlorotrimethylsilane (TMCS) and combinations thereof. The silicon oxide-based low-k material, in accordance with embodiments of the invention, is maintained at temperatures in a range of 40 to 200 degrees Celsius, and preferably at a temperature of about 150 degrees Celsius, and at pressures in a range of 1,070 to 9,000 psi, and preferably at a pressure of about 3,000 psi, while being exposed to the supercritical passivating solution. In accordance with further embodiments of the invention, a silicon oxide-based low-k material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.