Method of forming a field effect transistor using conductive masking material
US7271064B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Feb 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes forming transistor gate semiconductive material into a gate line over a semiconductive material channel region. The gate line includes semiconductive material sidewalls. The semiconductive material sidewalls of the gate line are oxidized. After the oxidizing, at least one of a conductive metal or metal compound is formed in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.