High-k dielectric for thermodynamically-stable substrate-type materials

US7271458B2 · kind B2 · utility

Assignee

• The Board of Trustees of the Leland Stanford Junior University · US

Inventors

• Chi On Chui · Hsinchu, TW
• Krishna C. Saraswat · Saratoga, US
• Baylor B. Triplett · La Honda, US
• Paul McIntyre · San Jose, US

Key dates

• Filing date: Mar 31, 2003
• Grant date: Sep 18, 2007
• Expiry date: Mar 31, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/685
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiO2 equivalent (“TOx, Eq”). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.