Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
US7272034B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Aug 31, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes at least one magnetic element and a plurality of selection transistors. The at least one magnetic element is capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element. The at least one selection transistor is configured to allow the magnetic element to be alternately selected for writing and reading. Architectures for reading and writing to the magnetic storage cells are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.