Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
US7272035B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Aug 31, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes a magnetic element and a selection transistor. The magnetic element may be programmed using spin transfer induced switching by a write current driven through the magnetic element. The selection transistor includes a source and a drain. The plurality of magnetic storage cells are grouped in pairs. The source of the selection transistor for one magnetic storage cell of a pair shares the source with the selection transistor for another magnetic storage cell of the pair.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.