Thin-film deposition apparatus
US7273526B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2004 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Jun 8, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45574
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas-feeding apparatus configured to be connected to an evacuatable reaction chamber includes a gas-distribution head for introducing gases into the chamber through a head surface. The gas-feeding head includes a first section for discharging a gas through the head surface toward a susceptor and a second section for discharging a gas through the head surface toward the susceptor. The first and the second sections are isolated from each other in the gas-distribution head, at least one of which section is coupled to an exhaust system for purging therefrom a gas present in the corresponding section without passing through the head surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.