Variable density and variable persistent organic memory devices, methods, and fabrication
US7273766B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2005 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Jan 20, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An organic memory device comprising two electrodes having a selectively conductive decay media between the two electrodes provides a capability to control a persistence level for information stored in an organic memory cell. A resistive state of the cell controls a conductive decay rate of the cell. A high and/or low resistive state can provide a fast and/or slow rate of conductive decay. One aspect of the present invention can have a high resistive state equating to an exponential conductive decay rate. Another aspect of the present invention can have a low resistive state equating to a logarithmic conductive decay rate. Yet another aspect relates to control of an organic memory device by determining a power state and setting a resistive state of an organic memory cell based upon a current power state and/or an imminent power state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.