Reactive barrier/seed preclean process for damascene process
US7273808B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 3, 2003 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Nov 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a multilayer interconnect electronic component structure, and, in particular, an integrated circuit semiconductor device made using a copper damascene method is provided. The process of the invention uses a method for pre-cleaning exposed copper surfaces in the structure. The method employs a cleaning composition containing a nitrogen containing material and an oxygen containing material and also optionally a hydrogen containing material to remove the copper oxide film on copper surfaces in the structure. The preferred nitrogen material is nitrogen gas and the preferred oxygen material is oxygen gas. The gas mixture is preferably energized to form a plasma which is used to contact and remove the copper oxide and clean the structure. A two-step process may be used employing a nitrogen/oxygen mixture and then a hydrogen containing gas mixture such as Ar/H2. It has also been found that the advantages of the method include not only removal of residue and copper oxide from the structure without significant dielectric shift of the dielectric, but also provides enhanced metal adhesion to the treated dielectric as well as surface passivation of the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.