Semiconductor structure and fabrication therefor
US7273824B2 · kind B2 · utility
3Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2004 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Nov 9, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method of fabrication there-for are provided. The semiconductor structure comprises a substrate, a dielectric layer disposed over the substrate, a hydrophilic material layer disposed over the dielectric layer, and a hardmask layer disposed over the hydrophilic material layer. It is noted that, the edge of the semiconductor structure may be polished after the hydrophilic material layer is formed over the dielectric layer and before the hardmask layer is formed over the hydrophilic material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.