Vacuum plasma processor including control in response to DC bias voltage
US7276135B2 · kind B2 · utility
11Cited by
8References
63Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2004 |
| Grant date | Oct 2, 2007 |
| Priority date | — |
| Expiry date | Apr 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.