Method for fabricating a flux concentrating system for use in a magnetoelectronics device

US7279341B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Thomas V. Meixner · Gilbert, US
• Gregory W. Grynkewich · Gilbert, US
• Jaynal A. Molla · Gilbert, US
• J. Ren · Phoenix, US
• Richard Williams · Chandler, US
• Brian R. Butcher · Gilbert, US
• Mark Durlam · Chandler, US

Key dates

• Filing date: May 9, 2005
• Grant date: Oct 9, 2007
• Expiry date: Apr 7, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for fabricating a flux concentrating system (62) for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line (10) formed in a substrate (12) and forming a first material layer (24) overlying the bit line (10) and the substrate (12). Etching is performed to form a trench (58) in the first material layer (24) and a cladding layer (56) is deposited in the trench (52). A buffer material layer (58) is formed overlying the cladding layer (56) and a portion of the buffer material layer (58) and a portion of the cladding layer (56) is removed.