Trench isolation structure and method of manufacture therefor
US7279393B2 · kind B2 · utility
4Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2004 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Dec 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a trench isolation structure, a method for manufacturing a trench isolation structure, and a method for manufacturing an integrated circuit including the trench isolation structure. In one aspect, the method includes forming a hardmask over a substrate, etching a trench in the substrate through the hardmask, forming a liner in the trench, depositing an interfacial layer over the liner within the trench and over the hardmask and filling the trench with a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.