Semiconductor device, method for manufacturing the same, and plating solution
US7279408B2 · kind B2 · utility
8Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Oct 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.