Process for forming a redundant structure
US7279411B2 · kind B2 · utility
17Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Nov 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Device and method of fabricating device. The device includes a dual damascene line having a metal line and a via, and a redundant liner arranged to divide the metal line. The method includes forming a trench in a metal stripe of a dual damascene line, depositing a barrier layer in the trench, and filling a remainder of the trench with metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.