Low-k SiC copper diffusion barrier films
US7282438B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2004 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Feb 6, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.