Semiconductor device with high-k dielectric layer
US7282773B2 · kind B2 · utility
29Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | Sep 14, 2004 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Apr 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a substrate including isolation regions and active regions, and a high-k dielectric layer proximate the substrate. The high-k dielectric layer comprises a mixture formed by annealing at least one high-k material and at least one metal to oxidize the metal. The semiconductor device comprises a gate electrode proximate the high-k dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.