Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US7285308B2 · kind B2 · utility
24Cited by
5References
79Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2004 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Mar 12, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.