Method for the production of a bipolar semiconductor component, especially a bipolar transistor, and corresponding bipolar semiconductor component

US7285470B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Josef Bock · Birkenfeld, DE
• Thomas Meister · Taufkirchen, DE
• Reinhard Stengl · Stadtbergen, DE
• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE

Key dates

• Filing date: Sep 30, 2005
• Grant date: Oct 23, 2007
• Expiry date: Feb 12, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

The invention relates to a method for producing a bipolar semiconductor element, especially a bipolar transistor, and a corresponding bipolar semiconductor component. The inventive method comprises the following steps: a first semiconductor area (32, 34) of a first conductivity type (p) is provided above a semiconductor substrate (1); a connecting area (40) of the first conductivity type (p<+>) is provided above the semiconductor area (32, 34); a first insulating area (35″) is provided above the connecting area (40); a window (F) is formed within the first insulating area (35″) and the connecting area (40) so as to at least partly expose the semiconductor area (32, 34); a sidewall spacer (80) is provided in the window (F) in order to insulate the connecting area (40); a second semiconductor area (60) of the second conductivity type (n+) is provided so as to cover the sidewall spacer (80) and a portion of the surrounding first insulating area (35″); the surrounding first insulating area (35″) and the sidewall spacer (80) are removed in order to form a gap (LS) between the connecting area (40) and the second semiconductor area (60); and the gap (LS) is sealed by means of a second ins…