Endpoint detection for the patterning of layered materials
US7285775B2 · kind B2 · utility
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9References
19Claims
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Key dates
| Filing date | Dec 2, 2004 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Nov 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.