Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
US7286395B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2005 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Oct 27, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic memory is described. The magnetic memory includes a plurality of magnetic storage cell and at least one bit line and a plurality of source lines corresponding to the plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element that is programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and to a low resistance state by a second write current driven through the magnetic element in a second direction. The bit line(s) and the source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in a third direction that does not destabilize the low resistance state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.