Method of fabricating heteroepitaxial microstructures
US7288430B2 · kind B2 · utility
8Cited by
13References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 24, 2005 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Jan 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.