Method and system for patterning a dielectric film
US7288483B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2006 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Mar 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for patterning a dielectric film such as a low dielectric constant (low-k) material. A dry non-plasma etching process can be implemented to transfer a pattern from a photo-lithographic layer to a hard mask layer, while minimizing the evolution of surface roughness in the sidewall of the etched pattern in the hard mask layer. Once a pattern is transferred to the hard mask layer, the photo-lithographic layer can be removed in order to minimize the exposure of the underlying low-k dielectric film to the ashing or wet stripping process that facilitates removal of the photo-lithographic layer. The dry non-plasma removal process comprises a chemical treatment of the exposed hard mask layer, followed by a thermal treatment of the chemically treated exposed layer. The two steps, chemical and thermal treatment, can be repeated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.