Method for forming interconnects on thin wafers
US7288492B2 · kind B2 · utility
5Cited by
13References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2005 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Aug 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor interconnect including, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer; (c) reducing the thickness of the wafer; (d) forming solder bumps on the bonding pads; and (e) dicing the wafer into bumped semiconductor chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.