III-nitride power semiconductor device with a current sense electrode
US7288803B2 · kind B2 · utility
14Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Nov 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A III-nitride power semiconductor device that includes a current sense electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.