Electronic device with a memory cell
US7289350B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 5, 2005 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Apr 13, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an electronic device comprising a memory cell with a resistive storage element having a first terminal and a second terminal. The resistive storage element can be switched between a first storage state with a first conductivity and a second storage state with a second conductivity. An access switch is coupled to the first terminal of the resistive storage element and to a node for connecting the first terminal of the resistive storage element to the node in an access state of the memory cell and for insulating the first terminal of the resistive storage element from the node in an idle state of the memory cell. A protecting switch is connected to the resistive storage element. The protecting switch, in the idle state of the memory cell, reduces the voltage across the resistive storage element produced by electromagnetic interference and, in the access state of the memory cell, enables the reading and the writing of the storage states of the resistive storage element. The electronic device may further comprise a control circuit operatively coupled to the access switch and to the protective switch which is configured to control the function of the acc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.