Method of programming a resistive memory device
US7289351B1 · kind B1 · utility
33Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2005 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Aug 30, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In an embodiment of a method of programming a resistive memory device, an electrical potential is applied to the gate of a transistor operatively associated with the resistive memory device, and successive, increasing electrical potentials are applied across the resistive memory device. In another embodiment of a method of programming a resistive memory device, an electrical potential is applied across the resistive memory device; and successive, increasing electrical potentials are applied to the gate of a transistor operatively associated with the resistive memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.