Systems and methods for adjusting programming thresholds of polymer memory cells
US7289353B2 · kind B2 · utility
89Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2004 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Feb 14, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/56
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methodologies are provided for adjusting threshold associated with a polymer memory cell's operation by applying thereupon a regulated electric field and/or voltage pulse width, during a post fabrication stage. Such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell, to increase flexibility in circuit design. Accordingly, the present invention supplies both a current-voltage domain, and/or a frequency-time domain, to facilitate adjusting the program thresholds of the polymer memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.