Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
US7291286B2 · kind B2 · utility
1Cited by
27References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 23, 2004 |
| Grant date | Nov 6, 2007 |
| Priority date | — |
| Expiry date | Apr 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32862
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.