Low resistance contact in a semiconductor device
US7291532B2 · kind B2 · utility
4Cited by
2References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 19, 2005 |
| Grant date | Nov 6, 2007 |
| Priority date | — |
| Expiry date | Oct 31, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a contact electrically contacting an electrically conductive silicon structure, a substrate with a surface is provided, the substrate having the silicon structure at the surface. Silicon oxide is grown selectively on at least part of the silicon structure. A layer is produced over the surface and the silicon oxide and an opening is produced in the layer, the opening abutting on the silicon oxide. The selectively grown silicon oxide is removed and the opening is filled with electrically conductive material, whereby the electrically conductive material forms the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.