Method for fabricating a nitrided silicon-oxide gate dielectric
US7291568B2 · kind B2 · utility
8Cited by
32References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 26, 2003 |
| Grant date | Nov 6, 2007 |
| Priority date | — |
| Expiry date | Nov 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.